KTB1366 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
KTB1366 TRANSISTOR (PNP)
FEATURES
z Low Collector Saturation Voltage
z Complementary to KTD2058
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-60
-7
-3
2
63
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=-1mA,I_E=0
-60
V
V_(BR)CEO I_C=-50mA,I_B=0
-60
V
V_(BR)EBO I_E=-1mA,I_C=0
-7
V
I_CBO
V_CB=-60V,I_E=0
-100
μA
I_EBO
V_EB=-7V,I_C=0
-100
μA
h_FE(1)
V_CE=-5V, I_C=-0.5A
60
200
h_FE(2)
V_CE=-5V, I_C=-3A
20
V_CE(sat) I_C=-2A,I_B=-0.2A
-1
V
V_BE
V_CE=-5V, I_C=-0.5A
-1
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
150
pF
f_T
VCE=-5V,IC=-0.5A
9
MHz
CLASSIFICATION OF h_{FE (1)}
RANK
RANGE
O
60-120
Y
100-200
www.cj-elec.com
1
B,Nov,2014