KTA1668 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER, INDUSTRIAL)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTA1668 TRANSISTOR(PNP)
FEATURES
z High voltage: V_CEO=-60V
z High transistors frequency
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
-80
V
V_CEO
Collector-Emitter Voltage
-60
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current
-1
A
P_C
Collector power dissipation
500
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150
℃
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-0.1mA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-0.1mA,I_C=0
Collector cut-off current
I_CBO
V_CB=-50V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-4V,I_C=0
DC current gain
h_FE1
h_FE2
V_CE=-2V,I_C=-50mA
V_CE=-2V,I_C=-1A
Collector-emitter saturation voltage
V_CE(sat) I_C=-500mA,I_B=-50mA
Base-emitter saturation voltage
V_{B E(sat)} I_C=-500mA,I_B=-50mA
Transition frequency
f_T
V_CE=-10V,I_C=-50mA, f=100MHz
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
CLASSIFICATION of h_FE1
Rank
Range
Marking
O
60-120
JO
Y
100- 200
JY
Min Typ
-80
-60
-5
60
30
150
12
Max Unit
V
V
V
-0.1 μA
-0.1 μA
320
-0.7
V
-1.2
V
MHz
pF
GR
160-320
JGR
www.cj-elec.com
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DA,,NJouvn,20154