KTA1666 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTA1666
TRANSISTOR (PNP)
FEATURES
z Complementary to KTC4379
z Small Flat Package
z Low Saturation Voltage
z Power Amplifier and Switching Application
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V_(BR)CBO I_C= -1mA,I_E=0
-50
V
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-10mA,I_B=0
-50
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-1mA,I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB=-50V,I_E=0
-100
nA
Emitter cut-off current
I_EBO
V_EB=-5V,I_C=0
-100
nA
DC current gain
h_FE(1)*
V_CE=-2V, I_C=-500mA
70
240
h_FE(2)*
V_CE=-2V, I_C=-1.5A
40
Collector-emitter saturation voltage
V_CE(sat)* I_C=-1A,I_B=-50mA
-0.5
V
Base-emitter saturation voltage
V_BE(sat)* I_C=-1A,I_B=-50mA
-1.2
V
Collector output capacitance
C_ob
V_CB=-10V,I_E=0, f=1MHz
40
pF
Transition frequency
f_T
VCE=-2V,IC= -500mA
120
MHz
*Pulse test: pulse width ≤300mS, duty cycle≤ 2.0%.
CLASSIFICATION OF h_FE(1)
RANK
RANGE
MARKING
O
70–140
WO
Y
120–240
WY
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1
D,Nov,2015