KTA1663 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTA1663 TRANSISTOR (PNP)
FEATURES
z High current applications
z Complementary to KTC4375
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-3
VCEO Collector-Emitter Voltage
-3
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-1.5
PC
Collector Power Dissipation
500
RΘJA Thermal Resistance From Junction To Ambient
250
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=-1mA, I_E=0
-30
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-10mA, I_B=0
-30
Emitter-base breakdown voltage
V_(BR)EBO I_E=-1mA, I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-30V, I_E=0
Emitter cut-off current
I_EBO
V_EB=-5V, I_C=0
DC current gain
h_FE
V_CE=-2V, I_C=-0.5A
100
Collector-emitter saturation voltage
V_CE(sat) I_C=-1.5A, I_B=-30mA
Base-emitter voltage
V_BE
V_CE=-2V, I_C=-0.5A
Transition frequency
f_T
V_CE=-2V, I_C=-500mA
Collector output capacitance
C_ob
V_CB=-10V, I_E=0,f=1MHz
Typ Max Unit
V
V
V
-0.1 μA
-0.1 μA
320
-2
V
-1
V
120
MHz
50 MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
O
100-200
HO
Y
160-320
HY
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1
ED,Nov,2015