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| KTA1659A Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
KTA1659A TRANSISTOR (PNP)
FEATURES
z High Transition Frequency
z High Voltage Applications
z Complementary to KTC4370A
TO â 220F
1. BASE
2. COLLECTOR
3. EMITTER
123
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-180
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current
-1.5
A
PC
Collector Power Dissipation
2
W
RθJA Thermal Resistance From Junction To Ambient 62.5
â/W
Tj
Junction Temperature
Tstg Storage Temperature
150
â
-55~+150 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol Test conditions
Min Typ Max Unit
V(BR)CBO IC=-100µA,IE=0
-180
V
V(BR)CEO IC=-10mA,IB=0
-180
V
V(BR)EBO IE=-1mA,IC=0
-5
V
ICBO
VCB=-160V,IE=0
-1
μA
IEBO
VEB=-5V,IC=0
-1
μA
hFE
VCE=-5V, IC=-100mA
70
240
VCE(sat) IC=-500mA,IB=-50mA
-1.5
V
VBE
VCE=-5V, IC=-500mA
-1
V
Cob
VCB=-10V,IE=0, f=1MHz
30
pF
fT
VCE=-10V,IC=-100mA
100
MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
70-140
Y
120-240
www.cj-elec.com
1
D,May,2016
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