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| KTA1659 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
KTA1659 TRANSISTOR (PNP)
FEATURES
z High Transition Frequency
z High Voltage Applications
TO â 220F
1. BASE
2. COLLECTOR
3. EMITTER
123
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-160
-160
-5
-1.5
2
62.5
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-100µA,IE=0
-160
V
V(BR)CEO IC=-10mA,IB=0
-160
V
V(BR)EBO IE=-1mA,IC=0
-5
V
ICBO
VCB=-160V,IE=0
-1
μA
IEBO
VEB=-5V,IC=0
-1
μA
hFE
VCE=-5V, IC=-100mA
70
240
VCE(sat) IC=-500mA,IB=-50mA
-1.5
V
VBE
VCE=-5V, IC=-500mA
-1
V
Cob
VCB=-10V,IE=0, f=1MHz
30
pF
fT
VCE=-10V,IC=-100mA
100
MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
70-140
Y
120-240
www.cj-elec.com
1
C,May,2016
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