KTA1505 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
KTA1505 TRANSISTOR（PNP）
SOT-23
FEATURES
· Excellent h_FE linearity:
· Complementary to KTC3876
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-35
VCEO Collector-Emitter Voltage
-30
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-500
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=-100μA,I_E=0
-35
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA,I_B=0
-30
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100μA,I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-35V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-5V,I_C=0
DC current gain
h_FE(1) V_CE=-1V,I_C=-100mA
70
h_FE(2) V_CE=-6V,I_C=-400mA
25
Collector-emitter saturation voltage
V_CE(sat) I_C=-100mA,I_B=-10mA
Base-emitter voltage
Transition frequency
Collector output capacitance
V_BE V_CE=-1V,I_C=-100mA
f_T
V_CE=-6V,I_C=-20mA
C_ob
V_CB=-6V,I_E=0,f=1MHz
Typ Max Unit
V
V
V
-0.1
μA
-0.1
μA
400
-0.25 V
-1
V
200
MHz
13
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
www.cj-elec.com
O
70-140
AZO
Y
120-240
AZY
1
GR
200-400
AZG
BA,Jun,2014