KTA1504 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
KTA1504 TRANSISTOR (PNP)
SOT–23
FEATURES
 Complementary to KTC3875
 Low Noise
 Excellent h_FE Linearity
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-150
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-50
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-5
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE=-6V, IC=-2mA
70
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Transition frequency
fT
VCE=-10V,IC=-1mA,
80
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
70–140
ASO
Y
120–240
ASY
Typ
Max
Unit
V
V
V
-0.1
µA
-0.1
µA
400
-0.3
V
MHz
7
pF
GR
200–400
ASG
www.cj-elec.com
1
BA,Juln,2,2001144