KTA1298 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
KTA1298 TRANSISTOR (PNP)
FEATURES
z Low frequency power amplifier application
z Power switching application
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter
Value
Unit
V_CBO
Collector-Base Voltage
-35
V
V_CEO
Collector-Emitter Voltage
-30
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current –Continuous
-0.8
A
P_C*
Collector Dissipation
200
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base- emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
C_ob
I_C=- 1mA,I_E=0
I_C= -10mA, I_B=0
I_E=-1mA, I_C=0
V_CB=-30 V,I_E=0
V_EB= -5V,I_C=0
V_CE=-1V, I_C=-100mA
V_CE=-1V, I_C=-800mA
I_C=-500mA, I_B= -20mA
V_CE=-1V, I_C=-10mA
V_CE=-5V, I_C=-10mA,
V_CB=-10V, I_E=0,f=1MHz
Min
-35
-30
-5
100
40
-0.5
Typ
120
13
Max Unit
V
V
V
-0.1
μA
-0.1
μA
320
-0.4
V
-0.8
V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
MARKING
O
100-200
IO
Y
160-320
IY
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1
BA,OJucnt,2014