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| KTA1297 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92S Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92S Plastic-Encapsulate Transistors
KTA1297 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching Application
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-20
-6
-2
400
312
150
-55~+150
TO â 92S
1. EMITTER
2. COLLECTOR
3. BASE
12 3
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -0.1mA,IE=0
-20
V
V(BR)CEO IC=-1mA,IB=0
-20
V
V(BR)EBO IE=-0.1mA,IC=0
-6
V
ICBO
VCB=-20V,IE=0
-0.1
μA
IEBO
VEB=-6V,IC=0
-0.1
μA
hFE(1)
VCE=-2V, IC=-0.1A
120
400
hFE(2)
VCE=-2V, IC=-2A
40
VCE(sat) IC=-2A,IB=-0.1A
-0.5
V
VBE
VCE=-2V, IC=-0.1A
-0.85
V
Cob
VCB=-10V,IE=0, f=1MHz
40
pF
fT
VCE=-2V,IC=-0.5A
120
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
Y
120-240
GR
200-400
www.cj-elec.com
1
DA,A,Juugn,,22001164
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