KTA1281 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
KTA1281 TRANSISTOR (PNP)
FEATURES
z Low Collector Saturation Voltage: V_CE(sat)=-0.5V(Max.)(I_C=-1A)
z High Speed Switching time: t_stg=1.0 μS(Typ.).
z Complementary to KTC3209.
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-50
V_CEO
Collector-Emitter Voltage
-50
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-2
P_C
Collector Power Dissipation
1
T_J
Junction Temperature
150
T_stg
Storage Temperature
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage V(BR)CBO IC= -100 uA, IE=0
-50
Collector-emitter breakdown voltage
V_(BR)CEO I_C= -10mA, I_B=0
-50
Emitter-base breakdown voltage
V_(BR)EBO I_E= -100μA, I_C=0
-5
Collector cut-off current
I_CBO
V_CB= -50 V , I_E=0
Emitter cut-off current
I_EBO
V_EB= -5V , I_C=0
DC current gain
h_FE(1) V_CE= -2V, I_C= -0.5A
70
h_FE(2) V_CE= -2V, I_C= -1.5A
40
Collector-emitter saturation voltage
V_CE(sat) I_C=-1A, I_B= -0.05A
Base-emitter saturation voltage
V_BE(sat) I_C=-1A, I_B= -0.05A
Transition frequency
f_T
V_CE=-2V, I_C=-0.5A
Out capacitance
C_ob
V_CB= -10 V , I_E=0 , f=1MH_Z
Turn-on time
Storage time
Fall time
CLASSIFICATION OF h_FE(1)
Rank
t_on
V_CC=-30V,I_B1=-I_B2=-0.05A,
t_s
I_C=-1A
t_f
O
Range
70-140
www.cj-elec.com
1
Typ
Max Unit
V
V
V
-0.1
μA
-0.1
μA
240
-0.5
V
-1.2
V
100
MHz
40
pF
0.1
us
1
us
0.1
us
Y
120 - 240
C,Mar,2016