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| KTA1267 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92S Plastic-Encapsulate Transistors
KTA1267 TRANSISTOR (PNP)
FEATURES
z Excellent hFE Linearity
z Complementary to KTC3199
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-0.15
400
312
150
-55~+150
TO â 92S
1. EMITTER
2. COLLECTOR
3. BASE
12 3
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=- 0.1mA,IE=0
-50
V
V(BR)CEO IC=-1mA,IB=0
-50
V
V(BR)EBO IE=-0.1mA,IC=0
-5
V
ICBO
VCB=-50V,IE=0
-0.1
μA
IEBO
VEB=-5V,IC=0
-0.1
μA
hFE
VCE=-6V, IC=-2mA
70
400
VCE(sat) IC=-100mA,IB=-10mA
-0.3
V
Cob
VCB=-10V,IE=0, f=1MHz
7
pF
fT
VCE=-10V,IC=-1mA
80
MHz
CLASSIFICATION OF hFE
RANK
O
RANGE
70-140
Y
120-240
GR
200-400
www.cj-elec.com
1
E,Aug,2016
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