K596 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Si N-CHANNEL JUNCTION FET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
K596 Si N-CHANNEL JUNCTION FET
FEATURES
Power dissipation
P_CM: 0.1W Tamb=25
Gate Current
I _G: 10mA
Drain current
I _D: 1mA
Drain-Source voltage
BV_GDO: -20
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
1.SOURCE
2.GATE
3.DRAIN
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
Gate-Drain breakdown Voltage
BVGDO
IG= -100 A
-20
Gate-Source cut-off Voltage
VGS(off)
VDS= 5V , ID=1 A
-0.6
Drain Current
Forward Transfer Admittance
IDSS
|YFS|
VDS= 5 V , VGS=0
VDS= 5V , VGS=0, f=1KHz
100
0.4
1.2
Input Capacitance
Ciss
VDS=5V, VGS=0, f=1MHz
3.5
Output Capacitance
C_RSS
VDS= 5 V, VGS=0
f = 1MHz
0.65
MAX
-1.5
800
UNIT
V
V
A
pF
pF
I_DSS Classification
Classification
IDSS (µA)
A
100-170
B
150-240
C
210-350
D
320-480
E
440-800