FUMG9N Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-05C Digital transistors (built-in resistors)
FUMG9N TRANSISTOR
DESCRIPTION
Epitaxial planar type NPN silicon transistor
(Built-in resistor type)
WBFBP-05C
(2×2×0.5)
unit: mm
FEATURES
1
z Two DTC114E in a package.
z Mounting cost and area can be cut in half.
APPLICATION
Dual Digital Transistors for Inverter Drive
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent circuit
MARKING:G9
G9
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
V_CC
50
V
Input voltage
V_IN
-10~40
V
Output current
I_O
I_C(MAX)
50
mA
100
Power dissipation
Pd
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
Electrical characteristics (Ta=25℃)
-55~150
℃
Parameter
Symbol Min.
Typ
Max.
Unit
Conditions
Input voltage
V_I(off)
V_I(on)
3
Output voltage
V_O(on)
Input current
I_I
Output current
I_O(off)
DC current gain
G_I
30
Input resistance
R₁
7
Resistance ratio
R₂/R₁
0.8
Transition frequency
f_T
0.5
V
V_CC=5V ,I_O=100µA
V_O=0.3V ,I_O=10 mA
0.3
V
0.88
mA
I_O/I_I=10mA/0.5mA
V_I=5V
0.5
µA
V_CC=50V, V_I=0
V_O=5V ,I_O=5mA
10
13
KΩ
1
1.2
250
MHz
V_CE=10V ,I_E=-5mA,f=100MHz