FUMF21N Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Power management Dual-transistors
FUMF21N TRANSISTOR
DESCRIPTION
Silicon epitaxial planar transistor
WBFBP-06C
(2×2×0.5)
unit: mm
FEATURES
z 2SA2018 and DTC114E are housed independently
1
in a package.
z Power switching circuit in a single package.
z Mounting cost and area can be cut in half.
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:F21
F21
TR1 MAXIMUM RATINGS T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
Collector- Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
DTR2 Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
V_CC
V_IN
I_O
I_C(MAX)
Pd
Junction temperature
Tj
Storage temperature
Tstg
Value
-15
-12
-6
-0.5
0.15
150
-55-150
Units
V
V
V
A
W
℃
℃
Limits
Unit
50
V
-10~40
V
50
mA
100
150
mW
150
℃
-55~150
℃