FRB751 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Schottky barrier Diodes

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02L Plastic-Encapsulate Diodes
FRB751 Schottky barrier Diodes
DESCRIPTION
Silicon epitaxial planar
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
APPLICATION
High speed switching For Detection
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 5
5
WBFBP-02L
(0.8×0.6×0.45)
unit: mm
1
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
V_RM
V_R
I_O
I_FSM
T_j
T_stg
Limits
40
30
30
150
125
-40~125
Electrical Ratings @T_A=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V_F
I_R
C_T
Min.
Typ. Max. Unit
0.37
V
0.5 μA
2
pF
Unit
V
V
mA
mA
℃
℃
Conditions
I_F=1mA
V_R=30V
V_R=1V,f=1MHZ