FMMT4124 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
FMMT4124 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM 0.33W Tamb=25
Collector current
I_CM 0.2A
Collector-base voltage
V _{(BR) CBO} 30V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=10 A IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 1m A IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10 A IC=0
5
V
Collector cut-off current
ICBO
VCB= 20 V , IE=0
0.05
A
Emitter cut-off current
IEBO
VEB= 3V , IC=0
0.05
A
DC current gain
HFE
VCE= 1V, IC= 2mA
120
360
Collector-emitter saturation voltage
VCE(sat) IC=50 mA, IB= 5m A
0.3
V
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=50 mA, IB= 5m A
fT
VCE=20V, IC= 10mA
300
f =100MHz
0.95 V
MHz
Marking
FMMT4124 2C