FMMBD4448HCDW Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SURFACE MOUNT SWITCHING DIODE ARRAYS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HCDW
SURFACE MOUNT SWITCHING DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
Switching Diode
WBFBP-06C
(2×2×0.5)
unit: mm
FEATURES
1
z Ultra-Small Surface Mount Package
z Fast Switching Speed
z High Conductance
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25
FMMBD4448HCDW
M_Ma_Mrki_Bng_D:K₄A₄7_48HCDW
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
V_RM
100
V
Peak Repetitive peak reverse voltage
V_RRM
Working Peak Reverse Voltage
V_RWM
80
V
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_R(RMS)
57
V
Forward Continuous Current
I_FM
500
mA
Average Rectified Output Current
I_O
250
mA
Non-Repetitive Peak forward surge current @=1.0µs
4.0
I_FSM
@=1.0s
2.0
A
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature range
Pd
R_θJA
T_J
T_STG
150
625
150
-65 to +150
mW
℃/W
℃
℃
Electrical Ratings @T_A=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse Recovery Time
Symbol
V_R
V_F1
V_F2
V_F3
V_F4
I_R1
I_R2
C_T
t_rr
Min.
80
0.62
Typ.
Max.
0.72
0.855
1.0
1.25
0.1
25
3.5
4
Unit
V
V
V
V
V
µA
nA
pF
ns
Conditions
I_R=100μA
I_F=5mA
I_F=10mA
I_F=100mA
I_F=150mA
V_R=70V
V_R=20V
V_R=6V,f=1MHz
V_R=6V,I_F=5mA