FBAT54SDW Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54SDW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
WBFBP-06C
(2×2×0.5)
unit: mm
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
1
FEATURES
z Low Forward Voltage Drop
z Fast Switching
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings @T_A=25℃
FBAT54SDW
Marking:KL8
Parameter
Symbol
Limits
Unit
Peak Repetitive reverse voltage
V_RM
DC Blocking Voltage
V_R
30
V
Average Rectified Output Current
I_O
100
mA
Power Dissipation
P_D
150
mW
Junction temperature
T_J
125
℃
Storage temperature range
T_STG
-65-125
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
MAX
Reverse breakdown voltage
V_(BR)
I_R= 100μA
30
Reverse voltage leakage current
I_R
V_R=25V
2
Forward voltage
Total capacitance
I_F=0.1mA
I_F=1mA
V_F
I_F=10mA
I_F=30mA
I_F=100mA
C_T
V_R=1V,f=1MHz
240
320
400
500
1000
10
Reverse recovery time
t _rr
I_F=10mA, I_R=10mA~1mA
5
R_L=100Ω
UNIT
V
uA
mV
pF
nS