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| FBAT54ADW Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54ADW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
WBFBP-06C
(2Ã2Ã0.5)
unit: mm
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
1
FEATURES
z Low Forward Voltage Drop
z Fast Switching
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings @TA=25â
FBAT54ADW
Marking:KL6
Parameter
Symbol
Limits
Unit
Peak Repetitive reverse voltage
VRM
DC Blocking Voltage
VR
Average Rectified Output Current
IO
Power Dissipation
PD
Junction temperature
TJ
Storage temperature range
TSTG
ELECTRICAL CHARACTERISTICSï¼Tamb=25â
30
100
150
unless
125
-65-125
otherwise
specifiedï¼
Parameter
Symbol
Test conditions
MIN
MAX
Reverse breakdown voltage
V(BR)
IR= 100μA
30
Reverse voltage leakage current
IR
VR=25V
2
Forward voltage
Total capacitance
IF=0.1mA
IF=1mA
VF
IF=10mA
IF=30mA
IF=100mA
CT
VR=1V,f=1MHz
240
320
400
500
1000
10
Reverse recovery time
t rr
IF=10mA, IR=10mA~1mA
5
RL=100Ω
V
mA
mW
â
â
UNIT
V
uA
mV
pF
nS
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