EMZ8 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – DUAL TRANSISTOR (PNP+PNP)

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMZ8 DUAL TRANSISTOR (PNP+PNP)
FEATURES
Both a 2SA2018 chip and 2SC2412K chip in a package
SOT-563
MARKING:Z8
Absolute maximum ratings(Ta=25℃)
Symbol
Para meter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Tr1
Tr2
-15
60
-12
50
-6
7
-150
150
150(TOTAL)
150
-55-+150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CEsat
f_T
C_ob
Test conditions
I_C= -10μA, I_E=0
I_C= -1mA , I_B=0
I_E= -10μA, I_C=0
V_CB=-15V, I_E=0
V_EB= -6V, I_C=0
V_CE=-2V, I_C= -10mA
I_C= -200mA, I_B= -10mA
V_CE=-2V, I_C= -10mA,
f=100MHz
V_CB=-10V, I_E=0,f=1MHz
Min
-15
-12
-6
270
Typ
260
6.5
Max
-0.1
-0.1
680
-0.25
Unit
V
V
V
μA
μA
V
MHz
pF
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
Test conditions
I_C=50μA,I_E=0
I_C=1mA,I_B=0
I_E=50μA,I_C=0
V_CB=60V,I_E=0
V_EB=7V,I_C=0
V_CE=6V,I_C=1mA
I_C=50mA,I_B=5mA
V_CE=12V,I_C=2mA,f=100MHz
V_CB=12V,I_E=0,f=1MHz
Min Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
180
MHz
2.0
3.5
pF
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