EMX1 Datasheet, PDF (1/4 Pages) Rohm – General purpose transistors (dual transistors)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-563 Plastic-Encapsulate Transistors
EMX1 ^{DUAL TRANSISTOR(NPN+NPN)}
FEATURES
z Two 2SC2412K chips in a SOT-563 package
z Mounting possible with SOT-563 automatic mounting machines
z Transistor elements are independent, eliminating interference
z Mountingcostandareacanbecutinhalf
SOT-563
MARKING:X1
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
7
150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=50μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=50μA,I_C=0
I_CBO
V_CB=60V,I_E=0
I_EBO
V_EB=7V,I_C=0
h_FE
V_CE=6V,I_C=1mA
V_CE(sat) I_C=50mA,I_B=5mA
f_T
V_CE=12V,I_C=2mA,f=100MHz
C_ob
V_CB=12V,I_E=0,f=1MHz
Min Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
180
MHz
2.0
3.5
pF
www.cj-elec.com
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DA,JMuany,2,2001145