EMT1 Datasheet, PDF (1/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – General purpose transistors (dual digital transistors)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-563 Plastic-Encapsulate Transistors}
EMT1 DUAL TRANSISTOR(PNP+PNP)
FEATURES
z Two 2SA1037AK chips in a package
z Mounting possible with SOT-563 automatic mounting machines
z Transistor elements are independent,eliminating interference
Marking: T1
SOT-563
Absolute maximum ratings (T_a=25℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=-50μA, I_E=0
V_(BR)CEO I_C=-1mA, I_B=0
V_(BR)EBO I_E=-50μA, I_C=0
I_CBO
V_CB=-60V, I_E=0
I_EBO
V_EB=-7V, I_C=0
h_FE
V_CE=-6V, I_C=-1mA
V_CE(sat) I_C=-50mA, I_B=-5mA
f_T
V_CE=-12V, I_C=-2mA, f=100MHz
C_ob
V_CB=-12V, I_E=0, f=1MHz
Value
-60
-50
-6
-150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
Min Typ Max Unit
-60
V
-50
V
-6
V
-0.1 μA
-0.1 μA
120
560
-0.5 V
140
MHz
5
pF
www.cj-elec.com
1
D,May,2015