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EMD3 Datasheet, PDF (1/5 Pages) Rohm – General purpose (dual digital transistors)
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMD3 Dual Digital Transistors (NPN+PNP)
FEATURES
z DTA114E and DTC114E transistors are built-in a package.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area can be cut in half.
SOT-563
1
MARKING: D3
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-10~40
V
Output current
IO
IC(MAX)
50
mA
100
Power dissipation
Pd
150(TOTAL)
mW
Junction temperature
Tj
Storage temperature
Tstg
150
℃
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
Input voltage
VI(off)
0.5
VI(on)
VCC=5V,IO=100µA
V
3
VO=0.3V ,IO=10mA
Output voltage
VO(on)
0.3
V
IO/II=10mA/0.5mA
Input current
II
0.88
mA
VI=5V
Output current
IO(off)
0.5
μA
VCC=50V, VI=0
DC current gain
GI
30
VO=5V,IO=5mA
Input resistance
R1
7
10
13
KΩ
Resistance ratio
R2/R1
0.8
1
1.2
Transition frequency
fT
250
MHz VCE=10V ,IE=-5mA,f=100MHz
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1
E,May,2015