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| EMD10 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual Digital Transistors (NPN+PNP) | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMD10 Dual Digital Transistors (NPN+PNP)
FEATURES
z Both the DTC123J chip and DTA123J chip in a package.
z Mounting possible with SOT-563 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
Marking: D10
SOT-563
TR1 Absolute maximum ratings (Ta=25â)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IO
IC(MAX)
Pd
Tj
Tstg
Limits
50
-5~12
100
100
150
150
-55~150
Unit
V
V
mA
mW
â
â
TR1 Electrical characteristics (Ta=25â)
Parameter
Symbol Min.
Typ
Max.
Unit
Conditions
Input voltage
VI(off)
0.5
VI(on)
V
1.1
VCC=5V, IO=100μA
VO=0.3V, IO=5mA
Output voltage
VO(on)
0.1
0.3
V
IO/II=5mA/0.25mA
Input current
II
3.6
mA
VI=5V
Output current
IO(off)
0.5
μA
VCC=50V, VI=0
DC current gain
GI
80
VO=5V, IO=10mA
Input resistance
R1
1.54
2.2
2.86
Kâ¦
-
Resistance ratio
R2/R1
17
21
26
-
Transition frequency
fT
250
MHz VCE=10V, IE=5mA, f=100MHz
www.cj-elec.com
1
DA,JMuany,2,2001145
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