DSS40LED02 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02C Plastic-Encapsulate Diodes
DSS40LED02 Schottky Barrier Diode
DESCRIPTION
WBFBP-02C
Planar Schottky barrier diode with an integrated guard ring
for stress protection.
FEATURES
z Low diode capacitance
z Low forward voltage
z Guard ring protected
APPLICATION
z Ultra high-speed switching
z Voltage clamping
z Protection circuits
z Mobile communication ,digital (still) cameras , PDAs and PCMCIA cards
MARKING: S6
_
+
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Symbol
Limits
DC reverse voltage
VR
40
Continuous forward current
IF
Non-repetitive peak forward surge current@t=8.3ms
IFSM
Junction temperature
T_J
Storage temperature
Tstg
120
200
125
-65~+150
Electrical Ratings @TA=25℃
Parameter
Symbol Min Typ Max Unit
Continuous forward voltage
V_F
0.38
0.5
V
1
Continuous reverse current (note 1)
I_R
Diode capacitance
C_d
1
μA
10
5
pF
Note:
1. pulse test: t_p=300μs; δ=0.02
www.cj-elec.com
1
Unit
V
mA
mA
℃
℃
Conditions
I_F=1mA
I_F =10mA
I_F =40mA
V_R=30V
V_R=40V
V_R=0V, f=1MHz
D,Mar,2015