DS751-40EAA02 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB0.6x0.3-2L-B Plastic-Encapsulate Diodes
DS751-40EAA02 SCHOTTKY BARRIER DIODE
DFNWB0.6x0.3-2L-B
FEATURE
 Small surface mounting type
 Low reverse current and low forward voltage
 High reliability
APPLICATION
 High speed switching for detection
 For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING
BACKSIDE
+
‐
FRONTSIDE
5
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
V_RRM
V_RWM
V_R(RMS)
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
I_O
Average Rectified Output Current
I_FSM
Non-Repetitive Peak Forward Surge Current@ t=8.3ms
P_d
Power Dissipation
R_θJA
T_J
T_stg
Thermal Resistance from Junction to Ambient
Junction temperature
Storage Temperature
Limit
40
28
30
200
100
1000
125
-55 ~ +150
Unit
V
V
mA
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Reverse breakdown voltage
Reverse current
V_(BR)
I_R
I_R=1mA
V_R=30V
Forward voltage
V_F
I_F= 1mA
Capacitance between terminals
C_T
V_R=1V,f=1MHz
Min Typ Max
Unit
40
V
0.5
μA
0.37
V
2
pF
www.cj-elec.com
1
A,Mar,2015