DS54LED02 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02C Plastic-Encapsulate Diodes
DS54LED02 Schottky Barrier Diode
WBFBP-02C
FEATURES
z Extremely Fast Switching Speed
z Low Forward Voltage
MARKING: L9
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Forward continuous Current
Repetitive peak Forward Current
Non-repetitive Peak Forward Surge Current
@t=8.3ms
Power Dissipation
Thermal resistance,junction to ambient air
Junction temperature
Storage temperature range
Symbol
V_RM
V_R
I_O
I_F
I_FRM
I_FSM
Pd
RθJA
T_J
T_STG
Limits
30
21
100
200
300
600
200
625
125
-65-150
Unit
V
V
mA
mA
mA
mA
mW
℃/W
℃
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Reverse recovery time
Capacitance between terminals
Symbol
Conditions
V _(BR)R
I_R=100μA
V_F1
I_F=0.1mA
V_F2
I_F=1.0mA
V_F3
I_F=10mA
V_F4
I_F=30mA
V_F5
I_F=100mA
I_R
V_R=25V
I_F=10mA, I_R=10mA to 1mA ,
t_rr
R_L=100Ω
C_T
V_R=1V,f=1MHz
Min Typ
30
Max
240
320
400
500
1000
2.0
5.0
10
Unit
V
mV
mV
mV
mV
mV
uA
ns
pF
www.cj-elec.com
1
E,Mar,2015