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| DS160-40THD02 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02L Plastic-Encapsulate Diodes
DS160-40THD02 SCHOTTKY BARRIER DIODE
FEATURES
z Low forward voltage drop
z Small power mold type
z Low IR
z Small current rectification
APPLICATIONS
z Low voltage rectification
z High efficiency DC-to-DC conversion
z Switch mode power supply
z LED backlight for mobile application
z Low power consumption applications
z Ultra high-speed switching
z Reverse polarity protection
WBFBP-02L
(1.6Ã0.8Ã0.5)
unit:mm
AD MARKING:
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
Value
Unit
40
V
VR(RMS)
IO
IFSM
PD
RÎJA
Tj
Tstg
RMS Reverse Voltage
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
28
1
5
150
667
125
-55~+150
V
A
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Diode capacitance
Symbol
V(BR)
IR
VF
Cd
Test conditions
IR=10μA
VR=40V
IF=0.7A
VR=1V; f=1MHz; Tj=25°C
VR=10V; f=1MHz; Tj=25°C
Min Typ Max Unit
40
V
50
μA
0.55
V
50
pF
20
pF
Reverse recovery time
IF=IR=10mA; RL=100Ω;
trr
IR(meas)=1mA
15
ns
www.cj-elec.com
1
F,Nov,2015
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