DAP202U Datasheet, PDF (1/4 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
DAP202U SWITCHING DIODE
FEATURES:
z Four types of packaging are available
z High speed
z Suitable for high packing density layout
z High reliability
MARKING:P
SOT-323
1
3
2
P
P
Solid dot = Green molding compound device,
if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Average Rectified Output Current
Power Dissipation
Thermal resistance From Junction to ambient
Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_FM
I_FSM
I_O
P_D
R_θJA
T_J
T_STG
Limit
80
80
300
2.0
100
200
625
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
Test conditions
V_(BR)
I_R= 100μA
I_R
V_R=70V
Min
Max
80
0.1
Forward voltage
V_F
I_F=100mA
1.2
Diode capacitance
C_D
V_R=6V, f=1MHz
3.5
Reverse recovery time
t_rr
V_R=6V, I_F=5mA
4
Unit
V
V
mA
A
mA
mW
℃/W
℃
℃
Unit
V
μA
V
pF
ns
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1
C,Oct,2014