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| D965V Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
D965V TRANSISTOR (NPN)
FEATURES
z General Purpose Switching and Amplification.
TO â 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
22
15
6
5
750
166
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
fT
Test conditions
IC= 1mA,IE=0
IC=1mA,IB=0
IE=10μA,IC=0
VCB=20V,IE=0
VEB=5V,IC=0
VCE=2V, IC=0.15mA
VCE=2V, IC=500mA
VCE=2V, IC=2A
IC=3A,IB=100mA
VCE=6V,IC=50mA,f=30MHz
Min Typ Max Unit
22
V
15
V
6
V
0.1
μA
0.1
μA
150
1200
2000
150
0.35
V
150
MHz
www.cj-elec.com
1
C,Dec,2015
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