D965 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
D965 TRANSISTOR NPN
TO 92
FEATURES
Power dissipation
P_CM : 0.75 W Tamb=25
Collector current
I_CM : 5
A
Collector-base voltage
V_(BR)CBO : 42
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=1 A IE=0
42
V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA IB=0
22
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10 A IC=0
6
Collector cut-off current
ICBO
VCB= 30 V , IE=0
V
0.1
A
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
HFE 1
HFE 2
HFE 3
VCE(sat)
VEB= 6 V IC=0
VCE= 2 V, IC= 0.15
mA
150
VCE= 2V, IC = 500 m A
340
VCE= 2V, IC = 2000
mA
150
IC=3000mA,IB=100 mA
0.1
A
950
0.35 V
CLASSIFICATION OF H_FE(2)
Rank
Range
R
340-600
T
560-950