D882M Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-251-3L Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
D882M TRANSISTOR (NPN)
TO-251-3L
FEATURES
Power dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
40
V
30
V
6
V
3
A
1.25
W
150
℃
-55-150
℃
1. EMITTER
2. COLLECTOR
3．BASE
ELECTRICAL CHARA CTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)_CBO
V(BR)_CEO
V(BR)_EBO
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{BE (sat)}
Transition frequency
f_T
I_C = 100μA, I_E=0
I_C = 10mA, I_B=0
I_E= 100μA, I_C=0
V_CB= 40 V, I_E=0
V_CE= 30 V, I_B=0
V_EB= 6 V, I_C=0
V_CE= 2 V, I_C= 1A
I_C= 2A, I_B= 0.2 A
I_C= 2A, I_B= 0.2 A
V_CE= 5V, I_C=0.1A
f =10MHz
40
30
6
60
90
CLASSIFICATION OF h_FE
Rank
R
Range
60-120
O
100-200
Y
160-320
Max
1
10
1
400
0.5
1.5
Unit
V
V
V
µA
µA
µA
V
V
MHz
GR
200-400
www.cj-elec.com
1
E,Feb,2016