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| D882H Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SOT-89-3L Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
D882H TRANSISTOR (NPN)
FEATURE
ï¬ Low VCE(sat)
ï¬ Large current capacity
MAKING: D882H
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
70
70
6
3
500
250
150
-55ï½+150
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)C= BO IC=100µA, IE 0
70
Collector-emitter breakdown voltage
V(BR= )CEO IC=10mA, IB 0
70
Emitter-base breakdown voltage
V(BR= )EBO IE=100µA, IC 0
6
Collector cut-off current
= ICBO VCB=40V, IE 0
Collector cut-off current
= ICEO VCE=30V, IB 0
Emitter cut-off current
= IEBO VEB=6V, IC 0
DC current gain
= hFE VCE=2V, IC 1A
60
Collector-emitter saturation voltage
VCE(sat) IC=2A, IB= 0.2A
Base-emitter saturation voltage
VB= E(sat) IC=2A, IB 0.2A
Transition frequency
fT
V= CE=5V,= IC 0.1A,f 10MHz
50
CLASSIFICATION of hFE
Rank
Range
R
60-120
O
100-200
Y
160-320
Typ
Max
Unit
V
V
V
1
µA
10
µA
1
µA
400
0.5
V
1.5
V
MHz
GR
200-400
www.cj-elec.com
1
BD,Nov,2015
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