D882-TO-251 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（NPN）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
D882 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 1.25W Tamb=25
Collector current
I_CM:
3A
Collector-base voltage
V_(BR)CBO : 40V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 251
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
40
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA IB=0
30
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
6
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
VCB= 40 V IE=0
ICEO
VCE= 30 V IB=0
IEBO
VEB= 6 V IC=0
DC current gain
hFE 1
hFE 2
VCE= 2 V, IC= 1A
60
VCE= 2 V, IC= 100m A
32
Collector-emitter saturation voltage
VCE (sat)
IC= 2A, IB= 0.2 A
Base-emitter saturation voltage
VBE (sat)
IC= 2A, IB= 0.2 A
Transition frequency
VCE= 5V, Ic=0.1A
fT
50
f =10MHz
MAX
1
10
1
400
UNIT
V
V
V
µA
µA
µA
0.5
V
1.5
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400