D882-TO-126 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 1.25 W Tamb=25
Collector current
I_CM : 3
A
Collector-base voltage
V_(BR)CBO : 40 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 126
1. EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100 A IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
6
V
Collector cut-off current
ICBO
VCB=40 V , IE=0
1
A
Collector cut-off current
Emitter cut-off current
ICEO
VCE=30 V , IB=0
IEBO
VEB=6V , IC=0
10
A
1
A
DC current gain
hFE 1
VCE= 2V, IC= 1A
60
400
hFE 2
VCE=2V, IC= 100m A
32
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB= 0.2A
0.5
V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=2A, IB= 0.2A
VCE=5 V, IC=0.1mA
fT
50
f = 10MHz
1.5
V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400