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| CZT127 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
CZT127 TRANSISTOR (PNP)
SOT-223
FEATURES
z Complementary to CZT122
z Silicon Power Darlington Transistors
z Low speed switching and amplifier applications
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-5
A
PC
Collector Power Dissipation
1
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=-1m A,IE=0
V(BR)CEO IC=-30mA,IB=0
ICBO
VCB=-100V,IE=0
ICEO
VCE=-50V,IB=0
IEBO
VEB=-5V,IC=0
hFE(1)
VCE=-3V,IC=-0.5A
hFE(2)
VCE=-3V,IC=-3A
VCE(sat)1 IC=-3A,IB=-12mA
VCE(sat)2 IC=-5A,IB=-20mA
VBE(on)
VCE=-3V,IC=-3A
fT
VCE=-4V,IC=-3A,f=1MHz
Cob
VCB=-10V, IE=0, f=1.0MHz
Min
-100
-100
1000
1000
4
Typ Max Unit
V
V
-200 uA
-500 uA
-2
mA
-2
-4
-2.5
200
V
V
V
MHz
pF
A,Jun,2011
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