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| CZT122 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
CZT122 TRANSISTOR (NPN)
FEATURES
z Complementary to CZT127
z Silicon Power Darlington Transistors
z Low speed switching and amplifier applications
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
5
A
PC
Collector Power Dissipation
1
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
â
-65~150 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=1m A,IE=0
V(BR)CEO IC=30mA,IB=0
ICBO
VCB=100V,IE=0
ICEO
VCE=50V,IB=0
IEBO
VEB=5V,IC=0
hFE(1)
VCE=3V,IC=0.5A
hFE(2)
VCE=3V,IC=3A
VCE(sat)1 IC=3A,IB=12mA
VCE(sat)2 IC=5A,IB=20mA
VBE(on)
VCE=3V,IC=3A
fT
VCE=4V,IC=3A,f=1MHz
Cob
VCB=10V, IE=0, f=1.0MHz
Min Typ
100
100
1000
1000
4
Max Unit
V
V
200 uA
500 uA
2
mA
2
V
4
V
2.5
V
MHz
200 pF
A,Jun,2011
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