CMSD2004S Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – HIGH VOLTAGE SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
CMSD2004S SWITCHING DIODE
FEATURES
CMSD2004S type is a silicon switching dual in series diode
manufactured by the epitaxial planar process, designed for
applications requiring high voltage capability. Power dissipation
SOT-23
MARKING : B6D
1
3
2
B6D
B6D
Solid dot = Green molding compound device,
if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
$YHUDJH5HFWLILHG 2XWSXW Current
Continuous Forward Current
Peak Repetitive Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance From Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
IO
I_F
I_FRM
I_FSM
PD
R_θJA
T_J
T_STG
Limit
300
240
200
225
625
2.5
250
500
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V_(BR)
I_R
V_F
C_D
t_rr
Test conditions
I_R= 100μA
V_R=240V
I_F=100mA
V_R=0V f=1MHz
I_F=I_R=30mA,R_L=100Ω
Min
240
Unit
V
V
mA
mA
mA
A
mW
℃/W
℃
℃
Max
Unit
V
0.1
μA
1
V
5
pF
50
ns
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1
D,Dec,2015