CMPSH-3 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SCHOTTKY DIODES

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
CMPSH-3 SCHOTTKY BARRIER DIODE
FEATURES
 High Switching Speed
 Low Forward Voltage
SOT-23
CMPSH-3
MARKING:
CMPSH-3
CMPSH-3A
CMPSH-3C
CMPSH-3S
CMPSH-3A
CMPSH-3C
CMPSH-3S
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak Repetitive Reverse Voltage
IO
Continuous Forward Current
IFRM
Peak Repetitive Forward Current
IFSM
Non-repetitive Peak Forward Surge Current @ t=8.3ms
PD
Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
30
100
350
750
350
286
125
-55~+150
Unit
V
mA
mA
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
Ctot
trr
Test conditions
IR=100μA
VR=25V
IF=2mA
IF=15mA
IF=100mA
VR=1V,f=1MHz
IF= IR=10mA, Irr=0.1×IR, RL=100Ω
Min Typ Max Unit
30
V
0.5
μA
0.33
0.45
V
1
7
pF
5
ns
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1
C,Oct,2015