CJZM718 Datasheet, PDF (1/7 Pages) ZP Semiconductor – DFNWB3×2-8L-G Plastic-Encapsulate Transistors-MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-8L-I Plastic-Encapsulate Transistors-MOSFETS
CJZM718 N-ch MOSFET and PNP Transistor
V_(BR)DSS/BVCEO
20V
R_DS(on)MAX
0.7Ω@4.5V
0.85Ω@2.5V
I_D/I_C
0.5A
-25V
/
-3A
DFNWB3×2-8L-I



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FEATURE
 High DC current gain
 Low Threshold
 Small package DFNWB3x2-8L-I
 Including a CJP718 transistor and a CJ1012
MOSFET independently in a package
MARKING:
APPLICATION
 Charging circuit
 Other power management in portable equipments
Equivalent Circuit
C
C
S
G
8
7
6
5
front
back
1
2
3
4
C
E
B
D
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
N-MOSFET
V_DS
V_GS
I_D
I_DM
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
Drain Current - Pulse
Power Dissipation, Temperature and Thermal Resistance
P_D
Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient (note1)
Thermal Resistance from Junction to Ambient (note2)
T_j
Junction Temperature
T_stg
Storage Temperature
T_L
Lead Temperature
Value
-25
-25
-7.5
-3
20
±6
0.5
2
1
175
110
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
V
A
V
V
A
A
W
℃/W
℃/W
℃
℃
℃
C,Aug,2016