CJX3439K Datasheet, PDF (1/6 Pages) ZP Semiconductor – N Channel +P Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate MOSFETS
CJX3439K N Channel +P Channel MOSFET
V_(BR)DSS
20 V
-20V
R_DS(on)MAX
380mΩ@ ^4.5V
450mΩ@ 2.5V
800mΩ@1.8V
520 mΩ@-4.5V
700mΩ@-2.5V
950mΩ(TYP)^@-1.8V
I_D
0.75A
-0.66A
SOT-563
FEATURE
z Surface Mount Package
z Low R_DS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
MARKING
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
Equivalent Circuit
D1 G2 ^S2
6
54
1
2
3
S1 G1 D2
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
P-MOSFET
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
V_DS
V_GS
I_D
I_DM
R_θJA
T_J
T_STG
T_L
www.cj-elec.com
1
Value
20
±12
0.75
1.8
-20
±12
-0.66
-1.2
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
A
℃/W
℃
℃
℃
C,Jun,2015