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CJX3152P Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual P-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate MOSFETS
CJX3152P Dual P-Channel MOSFET
V(BR)DSS
-20V
RDS(on)MAX
700 mΩ@-4.5V
1Ω@-2.5V
1.2Ω@-1.8V
ID
-0.66A
SOT-563
FEATURE
z Lead Free Product is Acquired
z Surface Mount Package
z P-Channel Switch with Low RDS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
MARKING
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small
Portable Electronics
z Logic Level Shift
Equivalent Circuit
D1 G2 S2
654
1
23
S1 G1 D2
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
TL
Value
-20
±12
-0.66
-1
150
833
150
-55~ 150
260
Unit
V
V
A
A
mW
℃/W
℃
℃
℃
www.cj-elec.com
1
B,Sep,2015