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| CJW1012 Datasheet, PDF (1/5 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – N-Channel Power MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJW1012
V(BR)DSS
20 V
N-Channel Power MOSFET
RDS(on)MAX
700mΩ@4.5V
850mΩ@2.5V
ID
500mA
GENERRAL DESCRIPTION
This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
SOT-323
3
1. GATE
2. SOURCE
3. DRAIN
1
2
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
z ESD protected
MARKING
APPLICATION
z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
Equivalent Circuit
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2 , Ta=25â)
Maximum Power Dissipation (note 3 , Tc=25â)
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
RθJC
Tj
Tstg
www.cj-elec.com
1
Value
20
±12
500
1000
150
275
833
455
150
-55 ~+150
Unit
V
mA
mW
â/W
â
E,Aug,2016
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