CJU60N08 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU60N08 N-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
80V
8.5 mΩ@10 V
60A
TO-252-2L(4R)
GENERAL DESCRIPTION
The CJU60N08 uses advanced trench technology and design to provide
excellent R_DS(on) with low gate charge. It can be used in a wide variety of
applications.
1. GATE
2
2. DRAIN
1
3. SOURCE
3
FEATURE
 VDS =80V,ID =60A
 RDS(ON) < 8.5mΩ @ VGS=10V
 Good stability and uniformity with high EAS
 Excellent package for good heat dissipation
 High density cell design for ultra low Rdson
 Special process technology for high ESD capability
 Fully characterized avalanche voltage and current
MARKING
APPLICATION
 Power switching application
 Hard switched and high frequency circuits
 Uninterruptible power supply
EQUIV ALENT CIRCUIT
CJU60N08
XXX
CJU60N08= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
80
±20
60
240
300
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
A-1,Nov,2016