CJU55P30 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU55P30 P-Channel Power MOSFET
DESCRIPTION
The CJU55P30 uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge. It can be used in a
wide variety of applications.
TO-252-2L
FEATURES
z High density cell design for ultra low R_DS(ON)
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible Power Supply(UPS)
MARKING
JCET LOGO
CJU55P30= Part No.
XXX=Date Code
1. GATE
2. DRAIN
3. SOURCE
EQUIVALENT CIRCUIT
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E_AS condition: V_DD=-25V,L=0.5mH, R_G=25Ω, Starting T_J = 25°C
www.cj-elec.com
1
Symbol
V_DS
V_GS
I_D
I_DM
E_AS(1)
P_D
R_θJA
T_J
T_stg
T_L
Limit
-55
±20
-30
-120
225
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-2,May,2015