CJU50N06 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU50N06 N-Channel Power MOSFET
GENERAL DESCRIPTION
The CJU50N06 uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURE
z High density cell design for ultra low R_dson
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
APPLICATION
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Single Pulsed Avalanche Energy*
E_AS
Power Dissipation
P_D
Thermal Resistance from Junction to Ambient
R_θJA
Junction Temperature
T_J
Storage Temperature
T_stg
*E_AS condition: T_j=25℃,V_DD=50V,L=0.5mH, R_G=25Ω, Starting T_J = 25°C
Value
60
±20
50
220
115
1.25
100
150
-50 ~+150
Unit
V
A
mJ
W
℃/W
℃
www.cj-elec.com
1
A-3,Jan,2016