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| CJU40P04 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Power MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU40P04
V(BR)DSS
-40V
P-Channel Power MOSFET
RDS(on)MAX
14mΩ@-10V
ID
-40A
TO-252-2L
DESCRIPTION
The CJU40P04 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. This device is well
1. GATE
2. DRAIN
3. SOURCE
suited for high current load applications.
FEATURES
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Good stability and uniformity with high EAS
APPLICATIONS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible Power Supply
MARKING
EQUIVALENT CIRCUIT
CJU40P04= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8ââ from case for 10s)
(1).EAS condition: VDD=-20V,L=1mH, RG=25â¦, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
-40
±20
-40
-160
544
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
â/W
â
â
â
www.cj-elec.com
1
A-3,Feb,2016
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