CJU40N10 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU40N10 N-Channel Power MOSFET
V_(BR)DSS
100V
R_DS(on)MAX
I_D
17mΩ@10V
40A
TO-252-2L
DESCRIPTION
This advanced high voltage MOSFET is designed to stand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain-to-source diode fast recovery time.
1. GATE
2. DRAIN
3. SOURCE
Desighed for high voltage, high speed switching applications such as
power supplies, converters, power motor controls and bridge circuits.
FEATURES
 High density cell design for ultra low RDS(on)
 Special process technology for high ESD capability
 Fully characterized avalanche voltage and current
 Excellent package for good heat dissipation
 Good stability and uniformity with high EAS
APPLICATIONS
 Hard switched and high frequency circuits
 Uninterruptible power supply
MARKING
 Power switching application
EQUIVALENT CIRCUIT
CJU40N10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
www.cj-elec.com
1
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
100
±20
40
160
320
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-3,Feb,2016