CJU30N10 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU30N10 N-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
100V
31mΩ@10V
30A
DESCRIPTION
This advanced high voltage MOSFET is designed to stand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain-to-source diode fast recovery time.
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
Desighed for high voltage, high speed switching applications such as
power supplies, converters, power motor controls and bridge circuits.
FEATURES
 High density cell design for ultra low RDS(on)
 Special process technology for high ESD capability
 Fully characterized avalanche voltage and current
 Excellent package for good heat dissipation
 Good stability and uniformity with high EAS
APPLICATIONS
 Hard switched and high frequency circuits
 Uninterruptible power supply
 Power switching application
MARKING
EQUIVALENT CIRCUIT
CJU30N10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
100
±20
30
120
156
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A-1,Feb,2016